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n o tre co mmended f o rnewde s i g n not recommended for new design mmg3003nt1 1 rf device data freescale semiconductor, inc. mmg3003nt1 40--3600 mhz, 20 db 24 dbm ingap hbt heterojunction bipolar transistor technology (ingap hbt) broadband high linearity amplifier the mmg3003nt1 is a general purpose amplifier that is internally input matched and internally output prematched. it is designed for a broad range of class a, small--signal, high linearity, general purpose applications. it is suitable for applications with frequencies from 40 to 3600 mhz such as cellular, pcs, bwa, wll, phs, catv, vhf, uhf, umts and general small--signal rf. features ? frequency: 40--3600 mhz ? p1db: 24 dbm @ 900 mhz ? small--signal gain: 20 db @ 900 mhz ? third order output intercept point: 40.5 dbm @ 900 mhz ? single voltage supply ? internally matched to 50 ohms ? cost--effective sot--89 surface mount package ? in tape and reel. t1 suffix = 1000 units, 12 mm tape width, 7 inch reel. 1 2 3 case 1514--02, style 1 sot--89 plastic table 1. typical performance (1) characteristic symbol 900 mhz 2140 mhz 3500 mhz unit small--signal gain (s21) g p 20 16.9 12 db input return loss (s11) irl -- 1 5 --14.1 -- 1 1 . 2 db output return loss (s22) orl -- 9 . 3 --14.5 --10.2 db power output @1db compression p1db 24 23.3 20.5 dbm third order output intercept point oip3 40.5 40 37 dbm 1. v cc =6.2vdc,t a =25 c, 50 ohm system. table 2. maximum ratings rating symbol value unit supply voltage v cc 7 v supply current i cc 400 ma rf input power p in 15 dbm storage temperature range t stg --65 to +150 c junction temperature (2) t j 150 c 2. for reliable operation, the j unction temperature should not exceed 150 c. table 3. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 109 c, 6.2 vdc, 180 ma, no rf applied r jc 31.6 c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mmg3003nt1 rev. 8, 2/2012 freescale semiconductor technical data ? freescale semiconductor, inc., 2004--2008, 2012. a ll rights reserved.
n o tre co mmended f o rnewde s i g n not recommended for new design 2 rf device data freescale semiconductor, inc. mmg3003nt1 table 4. electrical characteristics (v cc = 6.2 vdc, 900 mhz, t a =25 c, 50 ohm system, in freescale application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 19.3 20 ? db input return loss (s11) irl ? -- 1 5 ? db output return loss (s22) orl ? -- 9 . 3 ? db power output @ 1db compression p1db ? 24 ? dbm third order output intercept point oip3 ? 40.5 ? dbm noise figure nf ? 4 ? db supply current (1) i cc 160 180 205 ma supply voltage (1) v cc ? 6.2 ? v 1. for reliable operation, the juncti on temperature should not exceed 150 c.
n o tre co mmended f o rnewde s i g n not recommended for new design mmg3003nt1 3 rf device data freescale semiconductor, inc. table 5. functional pin description pin number pin function 1 rf in 2 ground 3 rf out /dc supply table 6. esd protection characteristics test conditions/test methodology class human body model (per jesd 22--a114) 1b machine model (per eia/jesd 22--a115) a charge device model (per jesd 22--c101) iv table 7. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22--a113, ipc/jedec j--std--020 1 260 c figure 1. functional diagram 3 2 1 2
n o tre co mmended f o rnewde s i g n not recommended for new design 4 rf device data freescale semiconductor, inc. mmg3003nt1 50 ohm typical characteristics v cc =6.2vdc v cc =6.2vdc 25 c 10 25 0 f, frequency (ghz) figure 2. small--signal gain (s21) versus frequency v cc =6.2vdc 20 15 1234 g p , small--signal gain (db) -- 4 0 c s11 4 -- 3 0 0 0 s22 f, frequency (ghz) figure 3. input/output return loss versus frequency -- 2 0 12 3 s11, s22(db) -- 1 0 25 11 23 5 p out , output power (dbm) figure 4. small--signal gain versus output power 21 19 17 15 13 10 15 20 g p , small--signal gain (db) 3500 mhz, c5 = 0.5 pf 2600 mhz, c5 = 1.2 pf 2140 mhz, c5, c6 = 1.3 pf 1960 mhz, c5, c6 = 1.3 pf 900 mhz, c5 = 2.7 pf 9 3.5 3 2.5 2 1.5 1 0.5 17 25 22 21 20 19 18 f, frequency (ghz) figure 5. p1db versus frequency p1db, 1 db compression point (dbm) 23 24 6.5 0 200 4 v cc , collector voltage (v) figure 6. collector current versus collector voltage 150 100 50 4.5 5 5.5 i cc , collector current (ma) 6 4 30 45 0 f, frequency (ghz) figure 7. third order output intercept point versus frequency 42 39 36 33 123 v cc =6.2vdc 100 khz tone spacing oip3, third order output intercept point (dbm) t c =85 c v cc =6.2vdc
n o tre co mmended f o rnewde s i g n not recommended for new design mmg3003nt1 5 rf device data freescale semiconductor, inc. 50 ohm typical characteristics 30 45 5.8 v cc , collector voltage (v) figure 8. third order output intercept point versus collector voltage 42 39 36 33 6 oip3, third order output intercept point (dbm) 6.2 6.4 6.6 f = 900 mhz 100 khz tone spacing 100 -- 4 0 -- 2 0 0 2 0 4 0 6 0 8 0 39 42 t, temperature ( _ c) figure 9. third order output intercept point versus case temperature 41 40 v cc =6.2vdc f = 900 mhz 100 khz tone spacing 8 vdc supply with 10 dropping resistor oip3, third order output intercept point (dbm) figure 10. third order intermodulation distortion versus output power p out , output power (dbm) imd, third order intermodulation d istortion (dbc) 24 912151821 -- 8 0 -- 3 0 -- 5 0 -- 6 0 -- 7 0 -- 4 0 150 10 3 10 5 120 figure 11. mttf versus junction temperature 10 4 125 130 135 140 145 t j , junction temperature ( c) note: the mttf is calculated with v cc =6.2vdc,i cc = 180 ma mttf (years) 4 0 8 0 f, frequency (ghz) figure 12. noise figure versus frequency 6 4 2 0.5 2 3 nf, noise figure (db) 1 1.5 2.5 3.5 19 -- 7 0 -- 2 0 9 p out , output power (dbm) figure 13. single--carrier w--cdma adjacent channel power ratio versus output power -- 3 0 -- 4 0 -- 5 0 -- 6 0 17 15 13 11 acpr, adjacent channel power ratio (dbc) v cc =6.2vdc v cc =6.2vdc f = 900 mhz 100 khz tone spacing v cc = 6.2 vdc, f = 2140 mhz, c5 = 1.3 pf single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 8.5 d b @ 0.01% pr obabilit y( ccdf)
n o tre co mmended f o rnewde s i g n not recommended for new design 6 rf device data freescale semiconductor, inc. mmg3003nt1 50 ohm application circuit: 40--800 mhz v cc =6.2vdc figure 14. 50 ohm test circuit schematic figure 15. s21, s11 and s22 versus frequency 800 -- 3 0 30 0 f, frequency (mhz) s22 200 400 600 20 10 0 -- 1 0 -- 2 0 figure 16. 50 ohm test circuit component layout c1 l1 c2 r1 c5 c4 c3 z1 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.403 x 0.058 microstrip z5 0.286 x 0.058 microstrip z6 0.061 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 s21, s11, s22 (db) s21 s11 rf output rf input v supply c3 c4 c5 z1 z2 c1 z5 z6 c2 r1 l1 v cc z4 z3 dut mmg30xx rev 2 table 8. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2, c4 0.01 f chip capacitors c0603c103j5rac kemet c3 68 pf chip capacitor c0805c680j5rac kemet c5 (1) 2.7 pf chip capacitor 12105j2r7bs avx l1 470 nh chip inductor bk2125hm471--t taiyo yuden r1 7.5 chip resistor rk73b2atte7r5j koa speer 1. tuning capacitor: capacitor value and location on th e transmission line are varied for different frequencies. table 9. supply voltage versus r1 values supply voltage 7 8 9 10 11 12 v r1 value 4.4 10 15.6 21 27 32 ? note: to provide v cc = 6.2 vdc and i cc = 180 ma at the device.
n o tre co mmended f o rnewde s i g n not recommended for new design mmg3003nt1 7 rf device data freescale semiconductor, inc. 50 ohm application circuit: 800--1100 mhz 1100 600 700 800 900 1000 1200 figure 17. 50 ohm test circuit schematic rf output rf input v supply c3 c4 c5 z1 z2 c1 z5 z6 c2 r1 l1 v cc z4 z3 dut figure 18. s21, s11 and s22 versus frequency f, frequency (mhz) figure 19. 50 ohm test circuit component layout c1 l1 c2 r1 c5 c4 c3 z1, z6 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.333 x 0.058 microstrip z5 0.07 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 -- 4 0 30 s22 20 10 0 -- 1 0 -- 2 0 -- 3 0 s21, s11, s22 (db) s21 s11 mmg30xx rev 2 v cc =6.2vdc table 10. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 47 pf chip capacitors c0805c470j5rac kemet c3 68 pf chip capacitor c0805c680j5rac kemet c4 0.01 f chip capacitor c0603c103j5rac kemet c5 (1) 2.7 pf chip capacitor 06035j2r7bs avx l1 22 nh chip inductor hk160822nj--t taiyo yuden r1 7.5 chip resistor rk73b2atte7r5j koa speer 1. tuning capacitor: capacitor value and location on th e transmission line are varied for different frequencies.
n o tre co mmended f o rnewde s i g n not recommended for new design 8 rf device data freescale semiconductor, inc. mmg3003nt1 50 ohm application circuit: 1800--2400 mhz figure 20. 50 ohm test circuit schematic rf output rf input v supply c3 c4 c5 z1 z2 c1 z5 z6 c2 r1 l1 v cc z4 z3 dut figure 21. s21, s11 and s22 versus frequency 2600 -- 4 0 30 1600 f, frequency (mhz) 1800 2000 2200 2400 20 10 0 -- 1 0 -- 2 0 -- 3 0 figure 22. 50 ohm test circuit component layout c1 l1 c2 r1 c5 c4 c3 z1, z7 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.172 x 0.058 microstrip z4 0.047 x 0.058 microstrip z5 0.062 x 0.058 microstrip z6 0.466 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 s21 s21, s11, s22 (db) c6 z7 s11 s22 c6 mmg30xx rev 2 v cc =6.2vdc table 11. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 47 pf chip capacitors c0805c470j5rac kemet c3 68 pf chip capacitor c0805c680j5rac kemet c4 0.01 f chip capacitor c0603c103j5rac kemet c5 (1) 1.2 pf chip capacitor 06035j1r2bs avx c6 (1) 0.1 pf chip capacitor 06035j0r1bs avx l1 22 nh chip inductor hk160822nj--t taiyo yuden r1 7.5 chip resistor rk73b2atte7r5j koa speer 1. tuning capacitor: capacitor value and location on th e transmission line are varied for different frequencies.
n o tre co mmended f o rnewde s i g n not recommended for new design mmg3003nt1 9 rf device data freescale semiconductor, inc. 50 ohm application circuit: 2500--2700 mhz figure 23. 50 ohm test circuit schematic rf output rf input v supply c3 c4 c5 z1 z2 c1 z5 z6 c2 r1 l1 v cc z4 z3 dut figure 24. s21, s11 and s22 versus frequency 2800 -- 4 0 30 2200 f, frequency (mhz) 2300 2400 2600 2700 20 10 0 -- 1 0 -- 2 0 -- 3 0 figure 25. 50 ohm test circuit component layout c1 l1 c2 r1 c5 c4 c3 z1, z6 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.086 x 0.058 microstrip z4 0.085 x 0.058 microstrip z5 0.404 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 2500 s21, s11, s22 (db) s22 s21 s11 mmg30xx rev 2 v cc =6.2vdc table 12. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 2.2 pf chip capacitors 06035j2r2bs avx c3 68 pf chip capacitor c0805c680j5rac kemet c4 0.01 f chip capacitor c0603c103j5rac kemet c5 (1) 1.2 pf chip capacitor 06035j1r2bs avx l1 39 nh chip inductor hk160839nj--t taiyo yuden r1 7.5 chip resistor rk73b2atte7r5j koa speer 1. tuning capacitor: capacitor value and location on th e transmission line are varied for different frequencies.
n o tre co mmended f o rnewde s i g n not recommended for new design 10 rf device data freescale semiconductor, inc. mmg3003nt1 50 ohm application circuit: 3400--3600 mhz figure 26. 50 ohmtest circuit schematic z1, z6 0.347 x 0.058 microstrip z2 0.575 x 0.058 microstrip z3 0.086 x 0.058 microstrip z4 0.085 x 0.058 microstrip z5 0.404 x 0.058 microstrip pcb getek grade ml200c, 0.031 , r =4.1 rf output rf input v supply c3 c4 c5 z1 z2 c1 z5 z6 c2 r1 l1 v cc z4 z3 dut c1 l1 c2 r1 c5 c4 c3 figure 27. s21, s11 and s22 versus frequency 3800 -- 2 0 20 3200 f, frequency (mhz) 3300 3400 3600 3700 10 5 0 -- 5 -- 1 0 -- 1 5 3500 s21, s11, s22 (db) s22 s11 figure 28. 50 ohm test circuit component layout 15 s21 v cc =6.2vdc mmg30xx rev 2 table 13. 50 ohmtest circuit component designations and values part description part number manufacturer c1, c2 2.2 pf chip capacitors 06035j2r2bs avx c3 68 pf chip capacitor c0805c680j5rac kemet c4 0.01 f chip capacitor c0603c103j5rac kemet c5 (1) 0.5 pf chip capacitor 06035j0r5bs avx l1 39 nh chip inductor hk160839nj--t taiyo yuden r1 7.5 chip resistor rk73b2atte7r5j koa speer 1. tuning capacitor: capacitor value and location on th e transmission line are varied for different frequencies.
n o tre co mmended f o rnewde s i g n not recommended for new design mmg3003nt1 11 rf device data freescale semiconductor, inc. 50 ohm typical characteristics table 14. common emitter s--parameters (v cc =6.2vdc,t a =25 c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 0100 0.141 178.297 12.985 173.850 0 0.057 0.785 0 0.087 --167.704 0150 0.153 175.556 12.654 168.9 0.057 --0.913 0.136 --137.479 0200 0.155 160.177 13.067 164.046 0.059 --2.423 0.125 --131.397 0250 0.152 159.068 12.851 160.334 0.058 --2.897 0.159 --130.233 0300 0.147 156.309 12.685 156.518 0.058 --3.227 0.187 --128.649 0350 0.139 153.853 12.519 152.664 0.058 --3.971 0.212 --128.651 0400 0.135 150.838 12.327 149.087 0.057 --4.471 0.239 --129.263 0450 0.129 148.378 12.124 145.521 0.057 --4.799 0.263 --130.237 0500 0.123 145.160 11.915 142.009 0.057 --5.285 0.285 --131.637 0550 0.117 142.332 11.694 138.634 0.057 --5.623 0.306 --133.294 0600 0.112 139.364 11.470 135.366 0.057 --6.012 0.326 --135.284 0650 0.106 136.769 11.238 132.093 0.057 --6.295 0.345 --137.146 0700 0.101 133.592 11.004 128.948 0.057 --6.705 0.362 --139.07 0750 0.096 131.187 10.770 125.882 0.057 --7.044 0.378 --141.171 0800 0.090 128.979 10.532 122.88 0.056 --7.277 0.394 --143.273 0850 0.086 126.711 10.298 119.942 0.056 --7.495 0.408 --145.372 0900 0.081 124.541 10.066 117.117 0.056 --7.847 0.422 --147.618 0950 0.076 122.189 9.841 114.276 0.056 --8.05 0.435 --149.849 1000 0.073 121.191 9.611 111.625 0.056 --8.311 0.447 --151.947 1050 0.069 119.451 9.393 108.992 0.056 --8.582 0.458 --154.142 1100 0.065 118.827 9.170 106.412 0.056 --8.89 0.470 --156.289 1150 0.062 118.851 8.957 103.879 0.056 --9.079 0.480 --158.481 1200 0.059 118.882 8.742 101.417 0.056 --9.405 0.490 --160.544 1250 0.056 119.703 8.541 99.039 0.056 --9.615 0.498 --162.608 1300 0.054 120.919 8.340 96.664 0.056 --9.805 0.507 --164.561 1350 0.051 123.223 8.143 94.364 0.056 --10.198 0.515 --166.501 1400 0.048 125.019 7.957 92.107 0.056 --10.536 0.522 --168.351 1450 0.046 128.063 7.774 89.892 0.056 --10.724 0.530 --170.229 1500 0.033 135.869 7.640 87.599 0.057 --11.197 0.529 --172.918 1550 0.030 139.127 7.475 85.482 0.057 --11.434 0.536 --174.487 1600 0.027 142.585 7.322 83.442 0.057 --11.649 0.541 --175.93 1650 0.024 146.640 7.170 81.444 0.057 --11.993 0.546 --177.394 1700 0.023 152.580 7.040 79.397 0.058 --12.335 0.552 --179.018 1750 0.021 158.266 6.890 77.439 0.058 --12.616 0.555 179.899 1800 0.021 166.196 6.756 75.477 0.058 --12.879 0.560 178.582 1850 0.022 171.633 6.621 73.576 0.058 --13.16 0.563 177.318 1900 0.023 177.431 6.495 71.695 0.058 --13.445 0.566 176.139 1950 0.025 --176.142 6.371 69.952 0.059 --13.806 0.570 175.08 2000 0.027 --173.137 6.251 67.988 0.059 --14.176 0.573 173.812 2050 0.029 --170.367 6.135 66.175 0.059 --14.413 0.577 172.704 2100 0.031 --168.467 6.025 64.385 0.060 --14.882 0.580 171.566 2150 0.033 --168.388 5.921 62.595 0.060 --15.338 0.583 170.426 2200 0.036 --169.515 5.815 60.823 0.060 --15.659 0.586 169.283 2250 0.039 --170.197 5.716 59.079 0.061 --16.136 0.589 168.164 (continued)
n o tre co mmended f o rnewde s i g n not recommended for new design 12 rf device data freescale semiconductor, inc. mmg3003nt1 50 ohm typical characteristics table 14. common emitter s--parameters (v cc =6.2vdc,t a =25 c, 50 ohm system) (continued) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2300 0.042 --171.944 5.618 57.331 0.061 --16.513 0.591 167.003 2350 0.045 --173.747 5.525 55.573 0.061 --16.98 0.593 165.803 2400 0.048 --175.268 5.431 53.848 0.062 --17.435 0.595 164.669 2450 0.052 --177.409 5.345 52.136 0.062 --17.955 0.597 163.447 2500 0.056 --178.703 5.258 50.405 0.062 --18.404 0.598 162.182 2550 0.060 179.650 5.173 48.736 0.063 --19.004 0.600 160.854 2600 0.063 177.705 5.096 47.012 0.063 --19.505 0.602 159.516 2650 0.067 175.894 5.015 45.266 0.063 --20.1 0.603 158.1 2700 0.071 174.932 4.938 43.452 0.064 --20.75 0.605 156.649 2750 0.074 172.453 4.861 41.831 0.064 --21.297 0.607 155.174 2800 0.079 170.595 4.788 40.113 0.065 --21.999 0.609 153.675 2850 0.083 168.962 4.715 38.402 0.065 --22.577 0.610 152.104 2900 0.087 167.373 4.643 36.711 0.065 --23.239 0.612 150.539 2950 0.091 165.543 4.573 35.036 0.066 --23.942 0.614 148.941 3000 0.095 164.513 4.506 33.356 0.066 --24.652 0.616 147.251 3050 0.099 163.309 4.438 31.684 0.066 --25.269 0.618 145.747 3100 0.103 162.077 4.373 29.98 0.067 --26.085 0.620 144.105 3150 0.107 161.249 4.308 28.307 0.067 --26.717 0.622 142.483 3200 0.110 160.222 4.244 26.653 0.067 --27.483 0.624 140.894 3250 0.114 159.057 4.182 25.007 0.068 --28.223 0.626 139.31 3300 0.117 158.018 4.121 23.381 0.068 --29.013 0.629 137.737 3350 0.119 156.94 4.061 21.791 0.068 --29.779 0.631 136.267 3400 0.122 155.757 4.004 20.196 0.069 --30.535 0.633 134.76 3450 0.126 154.754 3.949 18.618 0.069 --31.29 0.635 6 3500 0.12826 153.898 3.895 17.049 0.06938 --31.957 0.6367 131.951 3550 0.13168 152.875 3.84045 15.491 0.06971 --32.814 0.6392 130.655 3600 0.13497 152.157 3.78882 13.97 0.07016 --33.474 0.64031 129.412
n o tre co mmended f o rnewde s i g n not recommended for new design mmg3003nt1 13 rf device data freescale semiconductor, inc. 1.7 5.33 3.48 0.58 1.27 0.86 3.86 0.64 7.62 2.49 2.54 1.27 0.305 diameter figure 29. recommended mounting configuration notes: 1. thermal and rf grounding considerations should be used in pcb layout design. 2. depending on pcb design rules, as many vias as possible should be placed on the landing pattern. 3. if vias cannot be placed on the landing pattern, then as many vias as possible should be placed as close to the landing pattern as possible for optimal thermal and rf performance. 4. recommended via pattern shown has 0.381 x 0.762 mm pitch. recommended solder stencil
n o tre co mmended f o rnewde s i g n not recommended for new design 14 rf device data freescale semiconductor, inc. mmg3003nt1 package dimensions
n o tre co mmended f o rnewde s i g n not recommended for new design mmg3003nt1 15 rf device data freescale semiconductor, inc.
n o tre co mmended f o rnewde s i g n not recommended for new design 16 rf device data freescale semiconductor, inc. mmg3003nt1
n o tre co mmended f o rnewde s i g n not recommended for new design mmg3003nt1 17 rf device data freescale semiconductor, inc. product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an3100: general purpose amplifier and mmic biasing software ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 5 mar. 2007 ? corrected and updated part numbers in tables 8, 10, 11, 12, and 13, component designations and values, to rohs compliant part numbers, p. 6--10 6 july 2007 ? replaced case outline 1514--01 with 1514--02, issue d, p. 1, 14--16. case updated to add missing dimension for pin 1 and pin 3. 7 mar. 2008 ? removed footnote 2, continuous voltage and current applied to device, from table 2, maximum ratings, p. 1 ? corrected fig. 13, single--carrier w--cdma adjacent channel power ratio versus output power y--axis (acpr) unit of measure to dbc, p. 5 ? corrected s--parameter table frequency column label to read ?mhz? versus ?ghz? and corrected frequency values from ghz to mhz, p. 11, 12 8 feb. 2012 ? corrected temperature at which thetajc is measured from 25 c to 109 c and added ?no rf applied? to thermal characteristics table to indicate that ther mal characterization is performed under dc test with no rf signal applied, p. 1 ? table 6, esd protection characte rization, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 3 ? removed i cc bias callout from applicable graphs and tabl e 14, common emitter s--parameters heading as bias is not a controlled value, p. 4--12 ? added .s2p file availability to product software, p. 17
n o tre co mmended f o rnewde s i g n not recommended for new design 18 rf device data freescale semiconductor, inc. mmg3003nt1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004--2008, 2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mmg3003nt1 rev. 8, 2/2012

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